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(a) CDQW parameters and sublevels in conduction band at in-plane wave vector calculated by eight-band theory. (b) Si ion distribution simulated by the stopping and range of ions in matter (Ref. 8). (c) FTIR measurement schemes.
The absorption spectra at implantation doses of (a) and (b) . Annealing time is 1 min for all temperatures . (c) Interband absorption spectra at each temperature . Spectra of as-grown and as-implanted samples are given as reference. (d) Annealing-temperature-dependent mid-gap absorbance in the interband absorption spectra integrated from 0.5 to 0.8 eV and integral absorbance in the absorption spectra. was background corrected using the as-grown sample which was regarded as defect-free . of the as-implanted sample is plotted at room temperature.
Temperature dependences of (a) energy and (b) IAE. The IAE energy was extracted from Fig. 2(c) at an absorbance of 0.4. (c) Interband absorption spectra at four doses (in units of ). All samples were annealed at for 1 min. (d) Conduction band profile evolution with diffusion length (in unit of Å). (e) , , and energies calculated by eight-band theory considering QWI.
(a) Interband absorption spectra, (b) , and (c) intersubband absorption spectra calculated by eight-band theory. For the nonuniform case, denotes the average carrier density and is the peak value. Uni: uniform.
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