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Analysis of trap state densities at interfaces
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10.1063/1.3360221
/content/aip/journal/apl/96/10/10.1063/1.3360221
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/10/10.1063/1.3360221
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Characteristic trap emission frequencies calculated for various temperatures from Eq. (3) for -type and -type . The energy level of the trap state is given in terms of the energy difference to the majority carrier band edge .

Image of FIG. 2.
FIG. 2.

(a) CV characteristics on -type as a function of frequency (100 Hz–1 MHz) measured at 300 K. The inset shows the frequency dispersion of the accumulation capacitance between 77 and 300 K. The values in the legend state the frequency dispersion per decade. (b) Map of the normalized parallel conductance, , as a function of gate bias and frequency measured at 300 K on -type . The scale bar on the right can be used to extract the peak values, which are also given at the contour lines in the map.

Image of FIG. 3.
FIG. 3.

(a) CV characteristics on -type as a function of frequency (100 Hz–1 MHz) measured at 300 K. (b) Map of the normalized parallel conductance, , as a function of gate bias and frequency measured at 300 K on -type . The scale bar on the right can be used to extract the peak values, which are also given at the contour lines in the map.

Image of FIG. 4.
FIG. 4.

interface trap distribution determined from the conductance maps and Fig. 1 using both - and -type MOSCAPs measured at various temperatures. The arrows indicate the large and small peak (two trap levels), respectively, in the distribution.

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/content/aip/journal/apl/96/10/10.1063/1.3360221
2010-03-12
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Analysis of trap state densities at HfO2/In0.53Ga0.47As interfaces
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/10/10.1063/1.3360221
10.1063/1.3360221
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