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Interfacial self cleaning during atomic layer deposition and annealing of films on native (100)-GaAs substrates
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10.1063/1.3357422
/content/aip/journal/apl/96/11/10.1063/1.3357422
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/11/10.1063/1.3357422
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XPS and spectra of as-received native GaAs and GaAs after 20 ALD cycles of deposited at ALD temperatures of 200, 250, and . As–O reduction with ALD temperature is evident.

Image of FIG. 2.
FIG. 2.

XPS and spectra of as-received native GaAs and after exposure of native GaAs to five TDMAH pulses inside ALD chamber at ALD temperatures of 250 and .

Image of FIG. 3.
FIG. 3.

(a) XPS spectra and (b) XPS spectra of as-received native GaAs and after exposure of native GaAs to five TDMAH pulses inside ALD chamber at ALD temperatures of 250 and .

Image of FIG. 4.
FIG. 4.

XPS and spectra of native GaAs after 20 ALD cycles of deposited at ALD temperatures of 200, 250, and and annealed using RTA at for 20 s. Residual arsenic oxides are converted to gallium oxides during PDA.

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/content/aip/journal/apl/96/11/10.1063/1.3357422
2010-03-18
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Interfacial self cleaning during atomic layer deposition and annealing of HfO2 films on native (100)-GaAs substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/11/10.1063/1.3357422
10.1063/1.3357422
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