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Gain and noise of high-performance long wavelength superlattice infrared detectors
1.D. Z. Ting, C. J. Hill, A. Soibel, J. Nguyen, S. A. Keo, J. M. Mumolo, M. C. Lee, B. Yang, and S. D. Gunapala, Proc. SPIE 7419, 74190B (2009), and references therein.
9.Sidewall surface leakage current is a well-known phenomenon in these devices and is typically evaluated from a dark current density dependence on an area/perimeter ratio. See P. -Y. Delaunay, A. Hood, B. M. Nguyen, D. Hoffman, Y. Wei, and M. Razeghi, Appl. Phys. Lett. 91, 091112 (2007). We attributed the extra dark current to the sidewall surface leakage based on the dark current versus area/perimeter measurements performed for similar structures.
10.The SL diode noise, , is calculated from the measured noise at frequency by subtraction of instrumental noise , , where the instrument noise, was calculated from the noise measured at zero bias, . is the theoretical shot noise spectral density of a p-n diode, , where and are the diode and diode saturation currents, is the temperature, is the Boltzmann’s constant, and is the differential resistance at zero bias (from Ref. 15).
11.There is well-known difference between the photoconductive and noise gains in QWIPs. See H. C. Liu, Semicond. Semimetals 62, 3 (2000).
14.J. Bajaj, G. M. Williams, N. H. Sheng, M. Hinnrichs, D. T. Cheung, J. P. Rode, and W. E. Tennant, J. Vac. Sci. Technol. A 3, 192 (1985).
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