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Modeling and characterization of metal-semiconductor-metal-based source-drain contacts in amorphous InGaZnO thin film transistors
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10.1063/1.3364134
/content/aip/journal/apl/96/11/10.1063/1.3364134
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/11/10.1063/1.3364134
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Measured transfer characteristics with a schematic structure as an inset and (b) output characteristics of the fabricated -IGZO TFT with .

Image of FIG. 2.
FIG. 2.

Measured current voltage characteristics of the MSM structure. (a) curve for characterization of the -dominant operation with an equivalent circuit as an inset and (b) curve for charactering the -dominant region with a schematic energy band diagram for current mechanisms as an inset.

Image of FIG. 3.
FIG. 3.

Extraction of the S/D contact resistance through the external load resistance method (Ref. 11). (a) vs external load resistance as a function of and (b) vs curve to get . The inset shows voltage drops in the channel and contact region calculated from the extracted resistance from experimental data.

Image of FIG. 4.
FIG. 4.

Extraction of model parameters and verification of the physics-based model for the MSM structure in -GIZO TFTs. (a) Extraction of physics-based model parameters from experimental data (, , ). (b) Measured characteristics of the -IGZO MSM structure are compared with the physics based semiempirical model for .

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/content/aip/journal/apl/96/11/10.1063/1.3364134
2010-03-15
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Modeling and characterization of metal-semiconductor-metal-based source-drain contacts in amorphous InGaZnO thin film transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/11/10.1063/1.3364134
10.1063/1.3364134
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