Full text loading...
(a) Measured transfer characteristics with a schematic structure as an inset and (b) output characteristics of the fabricated -IGZO TFT with .
Measured current voltage characteristics of the MSM structure. (a) curve for characterization of the -dominant operation with an equivalent circuit as an inset and (b) curve for charactering the -dominant region with a schematic energy band diagram for current mechanisms as an inset.
Extraction of the S/D contact resistance through the external load resistance method (Ref. 11). (a) vs external load resistance as a function of and (b) vs curve to get . The inset shows voltage drops in the channel and contact region calculated from the extracted resistance from experimental data.
Extraction of model parameters and verification of the physics-based model for the MSM structure in -GIZO TFTs. (a) Extraction of physics-based model parameters from experimental data (, , ). (b) Measured characteristics of the -IGZO MSM structure are compared with the physics based semiempirical model for .
Article metrics loading...