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Modeling and characterization of metal-semiconductor-metal-based source-drain contacts in amorphous InGaZnO thin film transistors
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10.1063/1.3364134
/content/aip/journal/apl/96/11/10.1063/1.3364134
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/11/10.1063/1.3364134
/content/aip/journal/apl/96/11/10.1063/1.3364134
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/content/aip/journal/apl/96/11/10.1063/1.3364134
2010-03-15
2015-05-03
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Modeling and characterization of metal-semiconductor-metal-based source-drain contacts in amorphous InGaZnO thin film transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/11/10.1063/1.3364134
10.1063/1.3364134
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