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The current stability diagram at 300 mK. The energy consists of the gate voltage times the coupling constant . The n-MOSFET manifests a quantum dot behavior, which reveals the formation of an electron island in the silicon channel starting from the state.
Model of a n-MOSFET at cryogenic temperature with a paramagnetic trap close to the interface: The current flows by sequential tunneling through the island formed in the silicon channel. The current fluctuates between two levels according to the charge occupation of the interface defect that captures and emits an electron at one of the two separated 2D systems between the central island and the corresponding contact.
The relative occupation vs the inverse of the nominal temperature . We demonstrate that in our sample the detailed balance holds down to the nominal value of 600 mK. The sample was operated at and and it carried a current of about 15 nA. Inset: The current switching as a function of time at the lowest temperature. The current shift is 0.9 nA.
Magnetic field dependence of . The magnetic field is parallel to the electron channel. The deviation from a pure exponential trend reveals the formation of a triplet state at sufficiently high field. The generalized temperature extracted from the experimental data is . The nominal temperature of the liquid is 310 mK.
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