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Ionic doping effect in resistive switching memory
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10.1063/1.3364130
/content/aip/journal/apl/96/12/10.1063/1.3364130
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/12/10.1063/1.3364130
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic view of in without dopant. (b) Schematic view of in with dopant. (c) Single-electron energy levels of neutral in doped and undoped . Defect and are NN and referred as dopant-.

Image of FIG. 2.
FIG. 2.

(a) of neutral in undoped and doped . (b) of charged in undoped and Al doped as a function of . The zero of is set to the maximum of VB , and the upper limit of is the minimum of conduction band . The stable charge state of each defect is indicated.

Image of FIG. 3.
FIG. 3.

Distribution of RRAM device performance behaviors. (a) Forming voltages distribution in 100 samples measured at different locations of the wafer of undoped and Al doped . is the mean value and is the standard deviation. (b) Distribution of and of 100 continuous switching cycles of undoped and Al doped RRAM device. The program/erase pulses are set to be 1.5 V for for .

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/content/aip/journal/apl/96/12/10.1063/1.3364130
2010-03-22
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ionic doping effect in ZrO2 resistive switching memory
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/12/10.1063/1.3364130
10.1063/1.3364130
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