1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Origin of definite Hall voltage and positive slope in mobility-donor density relation in disordered oxide semiconductors
Rent:
Rent this article for
USD
10.1063/1.3364131
/content/aip/journal/apl/96/12/10.1063/1.3364131
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/12/10.1063/1.3364131
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Temperature dependences of and for [(a) and (b)] c-IGZO and [(c) and (d)] a-IGZO films with various values. (Circles and triangles) Experimental data. (Solid lines) Best fitting results by the percolation conduction model.

Image of FIG. 2.
FIG. 2.

Temperature dependence of conductivity for c-IGZO film with displayed in terms of (a) and (b) plots. The circles show the experimental data, and the dashed line the best fitting result without considering potential distribution (i.e., usual Arrhenius-type behavior). The solid line shows the best fitting result considering potential distribution with and .

Image of FIG. 3.
FIG. 3.

[(a) and (b)] Parameters obtained by the percolation conduction model for (a) c-IGZO and (b) a-IGZO plotted as a function of donor density. (c) Schematic of the distributed potential barriers above mobility edge . is the carrier relaxation time within the potential well regions . (d) Variation of relaxation time and mean free path obtained by the Hall measurements and by the calculations ignoring the potential barriers . The values are calculated using thermal velocity as .

Loading

Article metrics loading...

/content/aip/journal/apl/96/12/10.1063/1.3364131
2010-03-22
2014-04-19
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Origin of definite Hall voltage and positive slope in mobility-donor density relation in disordered oxide semiconductors
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/12/10.1063/1.3364131
10.1063/1.3364131
SEARCH_EXPAND_ITEM