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Conversion of neutral nitrogen-vacancy centers to negatively charged nitrogen-vacancy centers through selective oxidation
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The conversion of neutral nitrogen-vacancy centers to negatively charged nitrogen-vacancy centers is demonstrated for centers created by ion implantation and annealing in high-purity diamond. Conversion occurs with surface exposure to an oxygen atmosphere at . The spectral properties of the charge-converted centers are investigated. Charge state control of nitrogen-vacancy centers close to the diamondsurface is an important step toward the integration of these centers into devices for quantum information and magnetic sensing applications.
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