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Conversion of neutral nitrogen-vacancy centers to negatively charged nitrogen-vacancy centers through selective oxidation
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Figures

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FIG. 1.

(a) Confocal image of the unmasked region of sample S2 before annealing. (b) Confocal image of the same region after annealing 150 min in . Units are counts/ms. (c) Room temperature PL spectra of sample S2 in the same implantation region before and after 150 min of annealing. 1 mW excitation power. (d) 10 K PL spectra of sample S2. 1 mW excitation power.

Image of FIG. 2.

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FIG. 2.

(a) The room temperature ratio of the ZPL intensity to the total ZPL intensity as a function of annealing time. At least two data points were taken on each sample for times . 1 mW excitation power. (b) The ratio of the ZPL intensity to the total ZPL intensity as a function of optical excitation power at 10 K.

Image of FIG. 3.

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FIG. 3.

PLE scans of NV centers in sample S1. (a) Single NV centered formed during the CVD growth process beneath the sample surface. The repump laser is applied before every scan. (b) NV centers formed by implantation and annealing. The repump laser is applied before every scan. (c) Same as b however the repump laser is applied approximately every 20 scans.

Tables

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Table I.

Implantation conditions for the three N-implanted samples studied. Implantation depths are calculated using SRIM software (Ref. 13).

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/content/aip/journal/apl/96/12/10.1063/1.3364135
2010-03-23
2014-04-18

Abstract

The conversion of neutral nitrogen-vacancy centers to negatively charged nitrogen-vacancy centers is demonstrated for centers created by ion implantation and annealing in high-purity diamond. Conversion occurs with surface exposure to an oxygen atmosphere at . The spectral properties of the charge-converted centers are investigated. Charge state control of nitrogen-vacancy centers close to the diamondsurface is an important step toward the integration of these centers into devices for quantum information and magnetic sensing applications.

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Scitation: Conversion of neutral nitrogen-vacancy centers to negatively charged nitrogen-vacancy centers through selective oxidation
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/12/10.1063/1.3364135
10.1063/1.3364135
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