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Typical high-frequency (1 MHz) normalized capacitance-voltage curves of (a) as-deposited and annealed samples without SiN-RBL, (b) as-deposited and annealed samples with SiN-RBL. Arrows indicate the gate voltage sweeping directions.
The distributions of the interface trap density, , as a function of the energy levels between 0.2 to 0.8 eV below conduction bandedge of the dielectrics at room temperature. The error ranges on the point amount are roughly a factor 2 in the values.
HR-TEM images for (a) as-deposited and (b) annealed samples with SiN-RBL, (c) as-deposited and (d) annealed samples without SiN-RBL. Arrows indicate the nanoparticles into the .
A comparison of ideal flatband voltage , measured flatband voltage , flatband voltage shift , and effective oxide charge of all samples.
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