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Effects of rapid thermal annealing on reaction barrier layer/thermal-nitrided stacking gate dielectrics on n-type 4H-SiC
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10.1063/1.3367891
/content/aip/journal/apl/96/12/10.1063/1.3367891
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/12/10.1063/1.3367891
/content/aip/journal/apl/96/12/10.1063/1.3367891
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/content/aip/journal/apl/96/12/10.1063/1.3367891
2010-03-25
2014-11-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of rapid thermal annealing on Al2O3/SiN reaction barrier layer/thermal-nitrided SiO2 stacking gate dielectrics on n-type 4H-SiC
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/12/10.1063/1.3367891
10.1063/1.3367891
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