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(a) The x-ray diffraction pattern of film deposited on the (100) oriented NSTO substrate at substrate temperature . Only peaks were observed, which indicates preferred c-axis orientation of the film. (b) The temperature dependence of resistivity of film on NSTO. A sharp superconducting transition was observed near 9.5 K. The inset shows the temperature dependence of resistance of NSTO substrate.
The curves of the FeSeTe/NSTO heterojunction at temperature from 300 to 15 K. The lower right inset demonstrates the schematic diagram of the junction and measurement configuration. The upper left inset shows the possible processes of electrons passing through the junction in forward and reverse bias at low temperature respectively.
The main frame shows the temperature dependence of extracted SBH and ideality factor . The SBH is relatively low and decreases linearly at low temperature. The ideality factor increases quickly at low temperature. The lower right inset shows the analyzing model of the junction. The shunted resistor represents the tunneling process through the localized states at interface. The upper inset illustrates the experimental data and fitting curves. The data can be fitted very well in the forward bias region by thermionic emission theory.
(a) The curves of the FeSeTe/NSTO heterojunction at low temperature. When FeSeTe becomes superconducting, the curves clearly shift to higher bias voltage. The inset shows the deviation of SBH from the linearly extrapolated value based on the data at high temperature. (b) The forward curves at temperature 7 K under magnetic field up to 9 T. The shift in curves was suppressed gradually by magnetic field. The inset shows SBH decreased monotonically because of superconducting gap suppression by external magnetic field.
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