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Room-temperature operation type-II GaSb/GaAs quantum-dot infrared light-emitting diode
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10.1063/1.3371803
/content/aip/journal/apl/96/12/10.1063/1.3371803
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/12/10.1063/1.3371803
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) The room-temperature PL spectrums of the sample measured under different pumping power densities 0.38, 0.59, and . The peak at is resulted from the excitation laser (632.8 nm). (b) The PL peak energies obtained under different excitation powers and the fitting curve of the peaks with the third root of the excitation densities.

Image of FIG. 2.
FIG. 2.

(a) The I-V characteristics and (b) the room-temperature EL spectrums of the device. The applied voltages for the EL spectrums are 1.0, 1.5, and 2.0 V, respectively. The insert figure in (b) shows the EL peak energies of the device under different injection current densities.

Image of FIG. 3.
FIG. 3.

The EL peak energies of the device under different injection current densities and the fitting curve following the same function with minor modifications for PL peaks.

Image of FIG. 4.
FIG. 4.

Schematic band diagram of the device with forward applied voltages larger than the turn-on voltage 0.8 V.

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/content/aip/journal/apl/96/12/10.1063/1.3371803
2010-03-23
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Room-temperature operation type-II GaSb/GaAs quantum-dot infrared light-emitting diode
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/12/10.1063/1.3371803
10.1063/1.3371803
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