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Tuning the band gap of semiconducting carbon nanotube by an axial magnetic field
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Magnetic field dependence of an energy gap of K and bands of a semiconducting CNT. (b) Schematics of a FET-type device used in this work. [(c) and (d)] Evolution of transfer characteristics (; 12; 18; 24; and 33 T) of the studied sample at T=200 K and 150 K, respectively.

Image of FIG. 2.
FIG. 2.

(a) Magnetic field dependence of the device conductance. Conductance G is defined as that at a gate voltage . Symbols: experimental points. Solid lines: fits with an expression (5). Extrapolations of the curves to the point where they intersect are shown with dashed lines. Inset: Ratio of the device conductance at 200 K to that at 150 K as a function of magnetic field. Symbols: experimental points. Dotted line: fit with an expression (6). (b) Band profiles of the CNT (c) Conductance of sample, normalized to its value at zero magnetic field compared to simulations (solid lines); symbols: experimental points.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Tuning the band gap of semiconducting carbon nanotube by an axial magnetic field