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Effect of heterointerface polarization charges and well width upon capture and dwell time for electrons and holes above GaInN/GaN quantum wells
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10.1063/1.3373610
/content/aip/journal/apl/96/13/10.1063/1.3373610
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/13/10.1063/1.3373610
/content/aip/journal/apl/96/13/10.1063/1.3373610
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/content/aip/journal/apl/96/13/10.1063/1.3373610
2010-03-29
2014-07-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of heterointerface polarization charges and well width upon capture and dwell time for electrons and holes above GaInN/GaN quantum wells
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/13/10.1063/1.3373610
10.1063/1.3373610
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