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Electrical switching behavior from ultrathin potential barrier of self-assembly molecules tuned by interfacial charge trapping
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FIG. 1.

Schematic cross-section of (a) the sample used in this letter and (b) the intergrain region between LiF grains (illustrating the formation of a discontinuous rubrene layer at the interface with the OTS layer during the early stages of deposition). (c) Molecular structures of rubrene and OTS.

Image of FIG. 2.

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FIG. 2.

The contact angles (a) and the root-mean-square (rms) roughness (b) of the rubrene and OTS/rubrene surfaces with different OTS deposition times; AFM morphology (c) and phase (d) images (the scan area is ) of the rubrene surface with 6 h OTS deposition. The dashed line in (a) represents the starting time for OTS deposition.

Image of FIG. 3.

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FIG. 3.

(a) Current density vs voltage characteristics of the sample with 6 h OTS deposition and 15 nm LiF. The black square line represents the characteristics of the sample with 6 h OTS deposition and no LiF. (b) characteristics of the samples with different OTS deposition times. Inset shows the characteristics of the high-conductivity (top right) and low-conductivity states (bottom right).

Image of FIG. 4.

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FIG. 4.

Resistance vs voltage of the high-conductivity states of the samples with different OTS deposition times. Resistances are extracted as , where is the sample size.

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/content/aip/journal/apl/96/13/10.1063/1.3373611
2010-03-30
2014-04-21

Abstract

The investigation of the self-assembly molecules of -octyltrichlorosilane (OTS) as an ultrathin potential barrier in an organic two-terminal structure is presented. Electrical switching behavior with a large increase in current density is observed, and the mechanism of the electrical transition is mainly related to the OTS potential barrier tuned by charge trapping at the interface of OTS with the organic semiconductor layer. The switching behavior reveals the importance of the interfacial properties of self-assembly molecules in controlling the vertical charge transport.

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Scitation: Electrical switching behavior from ultrathin potential barrier of self-assembly molecules tuned by interfacial charge trapping
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/13/10.1063/1.3373611
10.1063/1.3373611
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