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Improved stability of a phase change memory device using Ge-doped SbTe at varying ambient temperature
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10.1063/1.3374334
/content/aip/journal/apl/96/13/10.1063/1.3374334
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/13/10.1063/1.3374334

Figures

Image of FIG. 1.
FIG. 1.

Resistances of Ge-ST and GST films as measured during heating at a fixed scan rate of . Shown in the inset are curves redrawn in the range of 300 to 400 K as a function of .

Image of FIG. 2.
FIG. 2.

characteristics for (a) SET operations and (b) RESET operations of Ge-ST and GST devices at various ambient temperature. (c) and of Ge-ST and GST devices as a function of Lines represent linear fitting curves for the respective resistance data (: RESET state of Ge-ST/GST; S-Ge-ST/S-GST: SET state of Ge-ST /GST).

Image of FIG. 3.
FIG. 3.

Temperature dependence of (a) (b) (c) for Ge-ST and GST devices.

Image of FIG. 4.
FIG. 4.

(a) characteristics of the initially RESET-programmed Ge-ST and GST devices at the selected ambient temperature. (b) Temperature dependence of determined from curves of Ge-ST and GST devices as in (a).

Tables

Generic image for table
Table I.

Electrical and optical properties of Ge-ST and GST films.

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/content/aip/journal/apl/96/13/10.1063/1.3374334
2010-04-01
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improved stability of a phase change memory device using Ge-doped SbTe at varying ambient temperature
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/13/10.1063/1.3374334
10.1063/1.3374334
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