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Resistances of Ge-ST and GST films as measured during heating at a fixed scan rate of . Shown in the inset are curves redrawn in the range of 300 to 400 K as a function of .
characteristics for (a) SET operations and (b) RESET operations of Ge-ST and GST devices at various ambient temperature. (c) and of Ge-ST and GST devices as a function of Lines represent linear fitting curves for the respective resistance data (: RESET state of Ge-ST/GST; S-Ge-ST/S-GST: SET state of Ge-ST /GST).
Temperature dependence of (a) (b) (c) for Ge-ST and GST devices.
(a) characteristics of the initially RESET-programmed Ge-ST and GST devices at the selected ambient temperature. (b) Temperature dependence of determined from curves of Ge-ST and GST devices as in (a).
Electrical and optical properties of Ge-ST and GST films.
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