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Cross section of scanning electron microscopy image of the inverted OSCs and the schematic device structure.
Transmittance of the ITO and FTO layers on the glass before and after annealing at for 1 h.
J-V characteristics of the OSCs with (a) ITO/evaporated Ag, (b) FTO/evaporated Ag, and (c) FTO/screen printed Ag at an irradiation intensity of over a period of 500 h.
Device performances of the inverted OSCs over a period of 500 h using ITO or FTO as the cathode and evaporated or screen printed Ag as the anode.
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