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Clustering effects in Ga(AsBi)
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10.1063/1.3374884
/content/aip/journal/apl/96/13/10.1063/1.3374884
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/13/10.1063/1.3374884
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Linear absorption at and PL spectrum for . (b) Experimental results for the temperature dependent PL peak position at various excitation intensities.

Image of FIG. 2.
FIG. 2.

Hopping on two energy scales. The first one is given by a Gaussian distribution with the characteristic energy scale and the second scale is given by an exponential distribution with energy scale , representing alloy disorder and cluster localization, respectively.

Image of FIG. 3.
FIG. 3.

Left: Experimental Stokes shift (a) and FWHM (c) for varying excitation powers. Right: Calculated Stokes shift (b) and FWHM (d) for varying using the two-scale model. Energy scales of and are obtained. The inset in (b) shows experimental (gray area) and theoretical (black line) PL spectra for the temperatures of 10 and 110 K at the excitation density of 1 mW.

Image of FIG. 4.
FIG. 4.

Temperature dependence of the PL intensity. The solid lines represent the simulation and squares/dots show the measured normalized PL intensity for and excitation power (lower curve), and and (upper curve).

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/content/aip/journal/apl/96/13/10.1063/1.3374884
2010-04-01
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Clustering effects in Ga(AsBi)
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/13/10.1063/1.3374884
10.1063/1.3374884
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