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Electrical-stress-induced degradation in AlGaN/GaN high electron mobility transistors grown under gallium-rich, nitrogen-rich, and ammonia-rich conditions
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10.1063/1.3377004
/content/aip/journal/apl/96/13/10.1063/1.3377004
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/13/10.1063/1.3377004
/content/aip/journal/apl/96/13/10.1063/1.3377004
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/content/aip/journal/apl/96/13/10.1063/1.3377004
2010-03-30
2015-01-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical-stress-induced degradation in AlGaN/GaN high electron mobility transistors grown under gallium-rich, nitrogen-rich, and ammonia-rich conditions
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/13/10.1063/1.3377004
10.1063/1.3377004
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