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(a) Sketch of MTJ for the proposed STT-spin logic: pinned reference layer FM1, free layer FM2, nonmagnetic spacer layers NM, pinned layers FM3 and FM4, antiferromagnetic layers AFM, and conduction lines labeled Iin, Ifs, ME, and LE. Arrows indicate possible directions of the magnetization. (b) Wiring of two MTJs with opposite pinning direction of FM1.
Shifted switching current astroids of two MTJs with opposite pinning of reference layer (middle) and corresponding hysteresis loops (bottom left and right). Dotted horizontal line: value of Ifs chosen for this example. Top: resistance of MTJs in dependence of Iin when starting from saturation corresponding to negative Iin direction. Shaded area: range of Iin/Ifs pairs where a low total resistance is possible. Vertical lines: values of Iin resulting from logic input.
(a) Results of OOMMF simulations of FM2 without external field. The line indicates the switching current astroid separating simulations without switched magnetization after 1.7 ns (open symbols) from simulations with switched M after 1.7 ns (solid symbols). (b) Switching current astroids simulated with an external field of 40 kA/m (500 Oe) applied in two opposite directions.
Results of OOMMF simulations including all FM layers. The lines indicate the switching current astroid separating simulations without switched magnetization after 2.15 ns (open symbols) from simulations with switched M after 2.15 ns (solid symbols).
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