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Effect of incident light power on Schottky barriers and I-V characteristics of organic bulk heterojunction photodiodes
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FIG. 1.

(a) Comparison of I-V models given in the Eqs. (1), (3), and (6) with the experimental data, inset: under AM1.5G—1 Sun incident light. (b) Mott–Schottky Characteristic, inset (left): SB C–V measurement (98 Hz) data for 200 nm P3HT:PCBM thickness, inset (right): calculation result of SCR width.

Image of FIG. 2.

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FIG. 2.

(a) Reverse bias I-V measurements under different ILPs. (b) Increase in the SCR width due to the ILP, inset: slope of I-V curves vs ILP.

Image of FIG. 3.

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FIG. 3.

(a) Reverse bias I-V measurements of devices having different P3HT:PCBM thicknesses. (b) Responsivity according to thicknesses of P3HT:PCBM layers.

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/content/aip/journal/apl/96/14/10.1063/1.3374402
2010-04-05
2014-04-19

Abstract

The space charge region (SCR) width of the Schottky barrier (SB) that forms on the interface between aluminum and organic semiconductor polymer of bulk-heterojunction (BH) organic photodiodes (OPD) based on poly(3-hexylthiophene) (P3HT): [6,6]-phenyl- -butyric acid methylester (PCBM) blend, has been investigated according to reverse voltage bias over the OPD. We focused on the effect of incident light power (ILP) on the SCR and the I-V characteristics of the devices. Comparison of the mathematical models and experimental data measured under different ILPs indicate a dependency of SCR to the ILP.

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Scitation: Effect of incident light power on Schottky barriers and I-V characteristics of organic bulk heterojunction photodiodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/14/10.1063/1.3374402
10.1063/1.3374402
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