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Effect of incident light power on Schottky barriers and I-V characteristics of organic bulk heterojunction photodiodes
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The space charge region (SCR) width of the Schottky barrier (SB) that forms on the interface between aluminum and organic semiconductor polymer of bulk-heterojunction (BH) organic photodiodes (OPD) based on poly(3-hexylthiophene) (P3HT): [6,6]-phenyl- -butyric acid methylester (PCBM) blend, has been investigated according to reverse voltage bias over the OPD. We focused on the effect of incident light power (ILP) on the SCR and the I-V characteristics of the devices. Comparison of the mathematical models and experimental data measured under different ILPs indicate a dependency of SCR to the ILP.
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