No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Light- and ion-gauge-induced space charges in tris-(8-hydroxyquinolate) aluminum-based organic light-emitting diodes
13.E. Ito, N. Hayashi, H. Ishii, N. Matsuie, K. Tsuboi, Y. Ouchi, Y. Harima, K. Yamashita, and K. Seki, J. Appl. Phys. 92, 7306 (2002).
14.We employed a nude ion-gauge (Canon Anelva Tech., NIG-2F) and a controller (YSL, VX-200B) to evaluate the process pressure.
19.We assumed the dielectric constant of to be 3.0.
20.K. Sugi, H. Ishii, Y. Kimura, M. Niwano, E. Ito, Y. Washizu, N. Hayashi, Y. Ouchi, and K. Seki, Thin Solid Films 464-465, 412 (2004).
Article metrics loading...
We report space charge formation in tris-(8-hydroxyquinolate) aluminum -based organic light-emitting diodes induced by light irradiation and ion-gauge (IG) operation during device fabrication. An analysis of the capacitance-voltage curves of the light-treated devices reveals the presence of uniformly distributed negative space charges in the layer. Spatial inhomogeneity of the orientation polarization as well as electrons trapped in the film can be the origin of the negative space charge. We also found that positively charged species can be included in the device due to IG operation.
Full text loading...
Most read this month