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I-V characteristics obtained from diodes with and without IAG technique. The measurements were performed at room temperature. All the measured diodes have an active area of .
Effective electron SB height and ideality factor of diodes with different drive-in annealing temperature. An optimized SB height can be obtained between 350 and .
Raman spectroscopy obtained from the samples with and without IAG technique, and the drive-in annealing temperature of IAG is from 350 to . All the samples have the same Raman spectrum, which represents the NiGe phase.
SIMS measurement of boron concentration profiles for different drive-in annealing temperature of IAG technique.
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