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Tuning of the Schottky barrier height in using ion-implantation after germanidation technique
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10.1063/1.3378878
/content/aip/journal/apl/96/14/10.1063/1.3378878
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/14/10.1063/1.3378878
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

I-V characteristics obtained from diodes with and without IAG technique. The measurements were performed at room temperature. All the measured diodes have an active area of .

Image of FIG. 2.
FIG. 2.

Effective electron SB height and ideality factor of diodes with different drive-in annealing temperature. An optimized SB height can be obtained between 350 and .

Image of FIG. 3.
FIG. 3.

Raman spectroscopy obtained from the samples with and without IAG technique, and the drive-in annealing temperature of IAG is from 350 to . All the samples have the same Raman spectrum, which represents the NiGe phase.

Image of FIG. 4.
FIG. 4.

SIMS measurement of boron concentration profiles for different drive-in annealing temperature of IAG technique.

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/content/aip/journal/apl/96/14/10.1063/1.3378878
2010-04-06
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Tuning of the Schottky barrier height in NiGe/n-Ge using ion-implantation after germanidation technique
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/14/10.1063/1.3378878
10.1063/1.3378878
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