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Epitaxial growth of thin films at the vicinal surface of n-Ge(111) substrate
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10.1063/1.3378986
/content/aip/journal/apl/96/14/10.1063/1.3378986
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/14/10.1063/1.3378986

Figures

Image of FIG. 1.
FIG. 1.

The (220) pole figures of films grown on n-Ge(111) substrate at the various annealing temperatures.

Image of FIG. 2.
FIG. 2.

Cross-sectional (a) low-magnification, (b) high-magnification TEM images and the electron diffraction patterns at two different position, (c) and (d) of films on n-Ge(111) substrate at .

Image of FIG. 3.
FIG. 3.

The saturation magnetization, (emu/cc) and average roughness, of the films at the various annealing temperatures.

Tables

Generic image for table
Table I.

Composition analysis at different position of films grown on n-Ge(111) substrate grown at .

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/content/aip/journal/apl/96/14/10.1063/1.3378986
2010-04-06
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Epitaxial growth of Co2MnSi thin films at the vicinal surface of n-Ge(111) substrate
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/14/10.1063/1.3378986
10.1063/1.3378986
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