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Monolayer dual gate transistors with a single charge transport layer
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/content/aip/journal/apl/96/14/10.1063/1.3379026
2010-04-07
2014-09-21

Abstract

A dual gate transistor was fabricated using a self-assembledmonolayer as the semiconductor. We show the possibility of processing a dielectric on top of the self-assembledmonolayer without deteriorating the device performance. The two gates of the transistor accumulate charges in the monomolecular transport layer and artifacts caused by the semiconductor thickness are negated. We investigate the electrical transport in a dual gate self-assembledmonolayerfield-effect transistor and present a detailed analysis of the importance of the contact geometry in monolayerfield-effect transistors.

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Scitation: Monolayer dual gate transistors with a single charge transport layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/14/10.1063/1.3379026
10.1063/1.3379026
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