NOTICE: Scitation Maintenance Sunday, March 1, 2015.

Scitation users may experience brief connectivity issues on Sunday, March 1, 2015 between 12:00 AM and 7:00 AM EST due to planned network maintenance.

Thank you for your patience during this process.

banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
1.G. H. Gelinck, H. E. A. Huitema, E. Van Veenendaal, E. Cantatore, L. Schrijnemakers, J. B. P. H. Van der Putten, T. C. T. Geuns, M. Beenhakkers, J. B. Giesbers, B. H. Huisman, E. J. Meijer, E. M. Benito, F. J. Touwslager, A. W. Marsman, B. J. E. Van Rens, and D. M. De Leeuw, Nature Mater. 3, 106 (2004).
2.M. Takamiya, T. Sekitani, Y. Kato, H. Kawaguchi, T. Someya, and T. Sakurai, IEEE J. Solid-state Circuits 42, 93 (2007).
3.E. Cantatore, T. C. T. Geuns, G. H. Gelinck, E. van Veenendaal, A. F. A. Gruijthuijsen, L. Schrijnemakers, S. Drews, and D. M. de Leeuw, IEEE J. Solid-state Circuits 42, 84 (2007).
4.J. R. Hauser, IEEE Trans. Educ. 36, 363 (1993).
5.M. G. Buhler and T. W. Griswold, J. Electrochem. Soc. 83–1, 391 (1983).
6.M. Spijkman, E. C. P. Smits, P. W. M. Blom, D. M. de Leeuw, Y. B. Saint Come, S. Setayesh, and E. Cantatore, Appl. Phys. Lett. 92 (2008).
7.G. H. Gelinck, E. van Veenendaal, and R. Coehoorn, Appl. Phys. Lett. 87, 073508 (2005).
8.L. L. Chua, R. H. Friend, and P. K. H. Ho, Appl. Phys. Lett. 87, (2005).
9.G. Horowitz, R. Hajlaoui, and P. Delannoy, J. Phys. III 5, 355 (1995).
10.E. C. P. Smits, S. G. J. Mathijssen, P. A. van Hal, S. Setayesh, T. C. T. Geuns, K. Mutsaers, E. Cantatore, H. J. Wondergem, O. Werzer, R. Resel, M. Kemerink, S. Kirchmeyer, A. M. Muzafarov, S. A. Ponomarenko, B. de Boer, P. W. M. Blom, and D. M. de Leeuw, Nature (London) 455, 956 (2008).
11.F. Maddalena, M. Spijkman, J. J. Brondijk, P. Fonteijn, F. Brouwer, J. C. Hummelen, D. M. de Leeuw, P. W. M. Blom, and B. de Boer, Org. Electron. 9, 839 (2008).
12.Y. L. Wu, Y. N. Li, and B. S. Ong, J. Am. Chem. Soc. 128, 4202 (2006).
13.I. G. Hill, Appl. Phys. Lett. 87, 3 (2005).
14.R. A. Street and A. Salleo, Appl. Phys. Lett. 81, 2887 (2002).
15.T. J. Richards and H. Sirringhaus, J. Appl. Phys. 102, 094510 (2007).
16.S. G. J. Mathijssen, E. C. P. Smits, P. A. van Hal, H. J. Wondergem, S. A. Ponomarenko, A. Moser, R. Resel, P. A. Bobbert, M. Kemerink, R. A. J. Janssen, and D. M. de Leeuw, Nat. Nanotechnol. 4, 674 (2009).

Data & Media loading...


Article metrics loading...



A dual gate transistor was fabricated using a self-assembledmonolayer as the semiconductor. We show the possibility of processing a dielectric on top of the self-assembledmonolayer without deteriorating the device performance. The two gates of the transistor accumulate charges in the monomolecular transport layer and artifacts caused by the semiconductor thickness are negated. We investigate the electrical transport in a dual gate self-assembledmonolayerfield-effect transistor and present a detailed analysis of the importance of the contact geometry in monolayerfield-effect transistors.


Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Monolayer dual gate transistors with a single charge transport layer