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Effect of doping on the mid-infrared intersubband absorption in GaN/AlGaN superlattices grown on Si(111) templates
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10.1063/1.3379300
/content/aip/journal/apl/96/14/10.1063/1.3379300
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/14/10.1063/1.3379300
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Band diagram of (a) (3 nm/3 nm) SLs and (b) (7 nm/4 nm) SLs. The difference is estimated at (a) 0.246 eV and (b) 0.106 eV for a doping level .

Image of FIG. 2.
FIG. 2.

(a) Cross-section TEM image of the Si-doped (7 nm/4 nm) SL structure grown on GaN-on-Si(111). (b) High-resolution TEM image illustrating three periods of the SL and (c) corresponding profile of one period of the SL where the is well distinguished.

Image of FIG. 3.
FIG. 3.

Low-temperature PL spectra from (a) (3 nm/3 nm) and (b) (7 nm/4 nm) grown on GaN-on-sapphire with different doping levels. Spectra are vertically shifted for clarity. Dashed lines are eye-guides to indicate the position of the PL emission assigned to the top AlGaN cladding and to the SL.

Image of FIG. 4.
FIG. 4.

Infrared absorption spectra for TM-polarized light measured from (a) (3 nm/3 nm) and (b) (7 nm/4 nm) QWs grown on GaN-on-Si(111) with different doping levels. Spectra are vertically shifted for clarity.

Image of FIG. 5.
FIG. 5.

Effect of doping in (7 nm/4 nm) SLs: (a) Conduction band simulation for a doping level . (b) Conduction band simulation for a doping level . (c) Schematic description of the down shift of the ground state due to exchange interaction estimated from experimental results.

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/content/aip/journal/apl/96/14/10.1063/1.3379300
2010-04-06
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of doping on the mid-infrared intersubband absorption in GaN/AlGaN superlattices grown on Si(111) templates
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/14/10.1063/1.3379300
10.1063/1.3379300
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