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Singlet-triplet transition in a few-electron lateral quantum dot
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Zero bias differential conductance vs at 250 mK and 6 T (parallel field), measured with an ac excitation of . Inset: scanning electron micrograph of the device (the scale bar is 500 nm). (b) Stability plot, i.e., conductance vs at zero applied magnetic field and 250 mK, plotted on a logarithmic scale. Very large addition energies are observed, due to the small electron effective mass in .

Image of FIG. 2.
FIG. 2.

(a) Stability plot at and (b) evolution of the zero-bias conductance as a function of the in-plane field for the same gate voltages. Charge rearrangement between the two measurements caused a small shift in between the two plots. Both data sets were taken at 250 mK.

Image of FIG. 3.
FIG. 3.

(a) Sketch of the energy levels crossing due to Zeeman splitting. At the Zeeman and exchange energies cause the formation of a triplet spin state. (b) Addition energies extracted from Fig. 2(b). The peak positions were determined by fitting the for each value of with the lineshape for a single-level QD resonance.24


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Singlet-triplet transition in a few-electron lateral In0.75Ga0.25As/In0.75Al0.25As quantum dot