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Opposite bias polarity dependence of resistive switching in -type Ga-doped-ZnO and -type NiO thin films
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10.1063/1.3380822
/content/aip/journal/apl/96/14/10.1063/1.3380822
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/14/10.1063/1.3380822
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

X-ray diffraction patterns of (a) NiO/Pt and (b) ZnO/Al and GZO/Al. Insets: Enlarged figures around the (111) peak of NiO and (0002) peaks of ZnO and GZO.

Image of FIG. 2.
FIG. 2.

Current images of NiO/Pt (a) before and (b) after twofold overwriting by application of ±7 V.

Image of FIG. 3.
FIG. 3.

Current images of ZnO/Al (a) before and (b) after twofold overwriting by application of ±5 V.

Image of FIG. 4.
FIG. 4.

(a) Current image of as-deposited GZO/Al and GZO/Al after twofold overwriting by applying (b) ±3 V and (c) ±4 V, respectively. (d) Topographic image of GZO/Al acquired simultaneously with (c).

Image of FIG. 5.
FIG. 5.

Schematic illustrations of the composition distribution in HRS for (a) NiO and (b) GZO, respectively. BE indicates the BE. Oxygen ion migration is also indicated.

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/content/aip/journal/apl/96/14/10.1063/1.3380822
2010-04-07
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Opposite bias polarity dependence of resistive switching in n-type Ga-doped-ZnO and p-type NiO thin films
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/14/10.1063/1.3380822
10.1063/1.3380822
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