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Wide memory window in graphene oxide charge storage nodes
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10.1063/1.3383234
/content/aip/journal/apl/96/14/10.1063/1.3383234
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/14/10.1063/1.3383234
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) AFM image of graphene oxide (GO) sheets, (b) SEM image of GO sheets, and (c) the characterization of GO sheets including the solid NMR spectrum, XPS spectrum and Raman spectrum from left to right.

Image of FIG. 2.
FIG. 2.

(a) Schematic cross section of the TaN//GO//Si memory structure, (b) optical image of inserted GO sheet film, (c) C-V hysteresis characteristics of the memory devices, and (d) erase characteristics of the memory structure.

Image of FIG. 3.
FIG. 3.

(a) Optical image of G sheet film derived from the thermal reduction in GO, (b) its XPS spectrum, (c) schematic cross section of the TaN//G//Si memory structure, and (d) C-V hysteresis characteristics of the memory device.

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/content/aip/journal/apl/96/14/10.1063/1.3383234
2010-04-05
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Wide memory window in graphene oxide charge storage nodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/14/10.1063/1.3383234
10.1063/1.3383234
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