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Establishing the mechanism of thermally induced degradation of ZnO:Al electrical properties using synchrotron radiation
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10.1063/1.3385024
/content/aip/journal/apl/96/14/10.1063/1.3385024
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/14/10.1063/1.3385024

Figures

Image of FIG. 1.
FIG. 1.

Free electron mobility , density (a), film resistivity (b), coherence length , and Al concentration of AZO films (c) vs substrate temperature at a fixed oxygen partial pressure of . Variation in with is shown as inset in panel (b), being the dashed line only guide-to-the-eye.

Image of FIG. 2.
FIG. 2.

-, -, and -edge XANES spectra of AZO films grown at , (16 at. %), and (3 at. %) using Zn–Al target with , and at using target with . The spectra are shifted vertically for clarity. The reference spectra of ZnO, (from Refs. 10 and 12) and (from Ref. 10) are shown for comparison, together with the spectra of a film with 19 at. % Al adapted from Ref. 11.

Image of FIG. 3.
FIG. 3.

XRD patterns of ZnO:Al films deposited using Zn–Al target with at (1) and (2). The XRD pattern of the sample after isothermal annealing for 2 h at (3) is also shown.

Tables

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Table I.

Optimum substrate temperature for different magnetron powers and oxygen partial pressures . In all cases, the was of .

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/content/aip/journal/apl/96/14/10.1063/1.3385024
2010-04-07
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Establishing the mechanism of thermally induced degradation of ZnO:Al electrical properties using synchrotron radiation
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/14/10.1063/1.3385024
10.1063/1.3385024
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