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Voltage induced magnetic anisotropy change in ultrathin junctions with Brillouin light scattering
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10.1063/1.3385732
/content/aip/journal/apl/96/14/10.1063/1.3385732
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/14/10.1063/1.3385732
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic for a structure of the sample and BLS measurement. The structure consist of /polyimide/ ITO, and wedge shaped layer was investigated several thickness for 0.55, 0.6, and 0.65 nm.

Image of FIG. 2.
FIG. 2.

Spin wave spectrum obtained from 0.55 nm layer of the sample for applying (black line) and −200 V (red line). In the positive frequency region, the peak indicating frequency of a surface magnon shifts (arrows of inset) for each different .

Image of FIG. 3.
FIG. 3.

Dependence of the spin wave frequency on the applied magnetic field for various bias voltages. The results from BLS measurement (closed square) were fitted to the Eq. (1) as shown by solid lines for three bias voltage, −200 (red) and (blue). The PMA change in 0.55 nm thick is larger than others (0.6 and 0.65 nm).

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/content/aip/journal/apl/96/14/10.1063/1.3385732
2010-04-09
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Voltage induced magnetic anisotropy change in ultrathin Fe80Co20/MgO junctions with Brillouin light scattering
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/14/10.1063/1.3385732
10.1063/1.3385732
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