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Influence of Sn Migration on phase transition in GeTe and thin films
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10.1063/1.3385781
/content/aip/journal/apl/96/14/10.1063/1.3385781
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/14/10.1063/1.3385781
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Peak intensity variation with temperature when sample is heated to, (a) and , (b) and .

Image of FIG. 2.
FIG. 2.

Peak intensity variation with temperature when sample is heated to, (a) and , (b) and . In both cases GeTe peaks exist at room temperature because the samples were previously heated above

Image of FIG. 3.
FIG. 3.

Variation of -spacing of (200) SnTe with temperature.

Image of FIG. 4.
FIG. 4.

(a) Peak intensity variation with temperature for sample heated to and , (b) Zoomed in XRD profile of sample after ramp to show detail.

Image of FIG. 5.
FIG. 5.

(a) Peak intensity variation with temperature for sample heated to and , (b) XRD profile of sample after ramp.

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/content/aip/journal/apl/96/14/10.1063/1.3385781
2010-04-09
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of Sn Migration on phase transition in GeTe and Ge2Se3 thin films
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/14/10.1063/1.3385781
10.1063/1.3385781
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