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(a) Schematic showing the central configuration of electrochemical cell. (b) The applied voltage of electrodeposition which varies from 0.4 to 0.8 V in a square wave form with 1 Hz frequency. (c) Optical micrograph of PbTe/Pb nanostructure material arrays with a field of view of . (d) The representative SEM image of PbTe/Pb nanostructure arrays.
[(a) and (b)] Schematic showing the correspondence relation between the applied voltage and the morphology of electrodeposits. The growth process in a period includes the two following parts: (c) the width of the electrodeposit change thin from wide and (d) the width of the electrodeposit change wide from thin.
HRTEM of electrodeposit at different locations. (a) HRTEM image at the wide part of electrodeposit shows lattice fringes spaced by 2.48 and 1.75 Å, corresponding to Pb (111) and (220) lattice-planes, respectively. (b) HRTEM image at the thin part of electrodeposit shows three groups of lattice fringes corresponding to the PbTe (200), PbTe (220), and Pb (111) lattice-planes. (c) HRTEM image at the transition zone from wide to thin part shows lattice fringes spaced by 3.2 and 2.87 Å corresponding to PbTe (200) and Pb (111) lattice-planes, respectively.
(a) SEM image of four-probe PbTe/Pb nanostructure material device. (b) The current-voltage characteristics of nanowires that corresponded to 0.001 and 0.005 M concentrations and current-voltage characteristic of annealed nanowire. The inset gives the measured profiles of atomic force microscope at the thin parts of nanowires.
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