banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Atomic resolution in tunneling induced light emission from GaAs(110)
Rent this article for
View: Figures


Image of FIG. 1.
FIG. 1.

Luminescence spectrum recorded at a sample voltage and tunneling current over an exposure time of 1 s. The spectrum is corrected for detector response.

Image of FIG. 2.
FIG. 2.

Schematic energy diagram of the tunneling junction with negative bias applied to the -type GaAs sample. Most of the tunneling current is due to tunneling from the CB minimum , which determines the topographic image. A small current component (1) originates from states near the VB maximum and (2) generates holes at the VB maximum which (3) recombine with conduction band electrons.

Image of FIG. 3.
FIG. 3.

(a) STM topograph ( ; ; and ) of a terrace of GaAs(110) and (b) map of the photon intensity with wavelengths acquired simultaneously. (c) Superposition of maxima in topographic (dark gray) and intensity (light gray) maps. A unit cell at identical lattice positions is indicated in each image.

Image of FIG. 4.
FIG. 4.

Calculated energies of CB minimum and VB maximum along with Fermi energy of the tip vs sample voltage. Energies are measured with respect to the Fermi energy of the sample. Dotted, dotted-dashed, and solid lines correspond to doping levels , , and , respectively. Further parameters: tip work function 4.5 eV, tip-sample distance 0.9 nm, and donor level 5.8 meV.


Article metrics loading...


Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Atomic resolution in tunneling induced light emission from GaAs(110)