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Applying uniform reversible strain to epitaxial oxide films
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10.1063/1.3374323
/content/aip/journal/apl/96/15/10.1063/1.3374323
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/15/10.1063/1.3374323

Figures

Image of FIG. 1.
FIG. 1.

Monoclinic lattice parameters of a PMN-PT(001) crystal as a function of the electric field applied across the 001 sample normal. Lines are linear fits.

Image of FIG. 2.
FIG. 2.

XRD results for the film. (a) 002 and 200 diffraction peaks for two strain states controlled by applying the indicated field to the substrate. (b) in-plane and out-of-plane lattice parameters of the and films as a function of the substrate field. Note: While the shift of the 002 peak is only , this shift is easily resolvable by high resolution XRD.

Image of FIG. 3.
FIG. 3.

Monoclinic lattice parameters of a 200 nm thick film as a function of the substrate field. Lines are linear fits.

Tables

Generic image for table
Table I.

Measured Poisson numbers for 200 nm thick films, and their respective bulk values.

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/content/aip/journal/apl/96/15/10.1063/1.3374323
2010-04-13
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Applying uniform reversible strain to epitaxial oxide films
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/15/10.1063/1.3374323
10.1063/1.3374323
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