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Semiconductor saturable absorbers for ultrafast terahertz signals
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Time-resolved electric field of a THz pulse with a fluence of , and a peak electric field of 300 kV/cm. Corresponding amplitude spectrum with noise floor indicated. (b) Instantaneous THz intensity at the sample position calculated from the square of the measured electric field.

Image of FIG. 2.
FIG. 2.

Symbols: Field transmission coefficient as a function of peak THz pulse field, and power transmission coefficient as a function of THz pulse fluence for GaAs [(a) and (b)], GaP [(c) and (d)], and Ge [(e) and (f)]. Solid lines—saturable transmission function fit to the measured power transmission coefficients.

Image of FIG. 3.
FIG. 3.

(a) Shape of the THz pulses before (reference) and after (sample) propagating through the 0.4 mm thick GaAs sample. This reference pulse had peak electric field strength of 292 kV/cm. (b) Modulus of Hilbert transforms of these THz pulses. Horizontal arrows indicate FWHMs of the pulses, and vertical arrows indicate the mean-weighted arrival times of the pulses. (c) Pulse shortening factors and (d) group refractive indices of GaAs, GaP, and Ge samples as functions of peak electric field of incident THz pulse.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Semiconductor saturable absorbers for ultrafast terahertz signals