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High stability of amorphous hafnium-indium-zinc-oxide thin film transistor
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10.1063/1.3387819
/content/aip/journal/apl/96/15/10.1063/1.3387819
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/15/10.1063/1.3387819
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XRD spectra of a-HIZO films as-deposited and annealed depending on oxygen ratios.

Image of FIG. 2.
FIG. 2.

XPS results of a-HIZO film after thermal annealing. The data shows the peak position of (a) and , (b) , (c) , and (d) .

Image of FIG. 3.
FIG. 3.

(a) Transfer curves of postannealed a-HIZO TFTs before and after BS for 60 h. (b) Time dependence of variation in for postannealed a-HIZO TFT due to applied on-current BS for 60 h.

Image of FIG. 4.
FIG. 4.

Shift in for annealed a-HIZO TFT after BTS test for 18 h.

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/content/aip/journal/apl/96/15/10.1063/1.3387819
2010-04-12
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High stability of amorphous hafnium-indium-zinc-oxide thin film transistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/15/10.1063/1.3387819
10.1063/1.3387819
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