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(a) LEED pattern measured on the annealed Mn:Si(111) film at , presenting a surface reconstruction; (b) Valence-band photoemission spectra from the clean reconstructed Si(111) surface (1) from the Mn:Si(111) interface before (2) and after the annealing at 620 K (3). The spectra have been measured at RT with photon energy ; (c) core levels photoemission spectra measured at RT with photon energy and d) XAS spectra measured along the edge.
(a) core level spectrum measured with a photon energy of 195 eV and a two-component fit providing a value of ≈3.8 eV for the splitting. An integrated background has been subtracted from the data. (b) Linear extrapolation of the value of the splitting vs for several Mn compounds. The values for (●), (◼), (▲), (◻) (Ref. 11 ),MnSi film (○) (this work) are reported. The black solid line denotes the linear fit resulting in a relation of the multiplet splitting vs as .
(a) Temperature dependence of MnSi/Si(111) volume magnetization at 100 Oe, in ZFC and FC regimes, with magnetic field applied parallel to the thin film plane. (b) Hysteresis loop collected for the same sample ( parallel to the sample plane) at 5 K (corresponding to the ordered phase of bulk MnSi) and at 60 K (in the paramagnetic range for bulk MnSi).
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