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(a) Cross-sectional view of the RDPC-VCSEL and the effective index variation in the lateral direction (not drawn to scale). (b) SEM image of the fabricated device. A circular row of holes is removed to form the ring defect for power output. The lattice constant is . The etching depth is 10-pair DBR out of the 20.5-pair top DBR, and the diameter of the oxide aperture is .
Light-current-voltage characteristics of the fabricated device at RT. The inset is the near field pattern of the lasing device under cw current of 15 mA.
Lasing spectra under different cw current levels at RT.
(a) Calculated and measured FFPs at 10 mA. (b) Calculated and measured FFPs at 34 mA.
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