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SEM images of GaN nanowires before compression (a) and after decompression (b) with scales labeled in each panel.
X-ray diffraction patterns at selected pressures. The solid and dashed arrows indicate the compression and decompression sequence.
Rietveld refinement of the x-ray diffraction patterns for GaN nanowires at (a) 65 GPa on compression and (b) 20.9 GPa on decompression. The red cross is experimental x-ray intensity and the green line is the calculated diffraction patterns based on refinement with the blue curve at the bottom showing the difference between the calculated and observed intensities. The vertical bars denote the indexed reflections for each phase with the space groups labeled beside. The characteristic reflection for the cubic rocksalt phase is labeled as c-(2 0 0).
Unit cell volume as a function of pressure for GaN nanowire (open squares) in comparison with that for bulk and nanocrystal GaN. Solid lines are fitted EOS curves for bulk GaN using bulk moduli of 187 GPa and 237 GPa from Refs. 9 and 7, respectively. The dashed line is fitted EOS curve for nanocrystalline GaN using bulk modulus of 319 GPa from Ref. 9.
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