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Dual carrier traps related hysteresis in organic inverters with polyimide-modified gate-dielectrics
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/content/aip/journal/apl/96/15/10.1063/1.3395389
2010-04-13
2014-10-01

Abstract

We integrated pentacene- and -diheptyl-3,4,9,10-perylenebiscarboximide-based transistors into an organic complementary metal oxide semiconductor (O-CMOS) whose gate-dielectric surface was modified by polyimide (PI). The hysteresis behaviors in metal-oxide-semiconductors,field-effect transistors, and O-CMOS were reported clearly. Measurements of hysteresis showed that the PI exhibited high trapping and detrapping speeds for charge carriers, including holes and electrons, to result in high performance transistors and O-CMOSs; moreover, the trapping and detrapping speeds were matched. Finally, a PI-modified organic inverter with little hysteresis, low static power dissipation, high noise margins, and switching voltage near was achieved simultaneously.

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Scitation: Dual carrier traps related hysteresis in organic inverters with polyimide-modified gate-dielectrics
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/15/10.1063/1.3395389
10.1063/1.3395389
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