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Temperature-dependent carrier tunneling for self-assembled InAs/GaAs quantum dots with a GaAsN quantum well injector
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10.1063/1.3396187
/content/aip/journal/apl/96/15/10.1063/1.3396187
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/15/10.1063/1.3396187
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of the TI structure. An additional QW is placed near an InAs QD layer over a thin GaAs barrier.

Image of FIG. 2.
FIG. 2.

PL spectra measured at (a) RT and (b) 15 K for TI structures with different barrier thickness and the QD reference sample.

Image of FIG. 3.
FIG. 3.

PL intensities of the QD GS emission as a function of temperature for TI structures with different barrier thickness and the QD reference sample. The inset picture shows the enhancement of QD GS emission as a function of temperature.

Image of FIG. 4.
FIG. 4.

Time-resolved PLs for the TI structure with 3 nm barrier thickness and the QD reference sample. The inset shows the evaluated carrier capture time (captured from the QW GS to QD GS) as a function of temperature.

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/content/aip/journal/apl/96/15/10.1063/1.3396187
2010-04-13
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Temperature-dependent carrier tunneling for self-assembled InAs/GaAs quantum dots with a GaAsN quantum well injector
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/15/10.1063/1.3396187
10.1063/1.3396187
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