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A SEM image of UV DBR from cross-section view. The total thickness of 25-pairs AlN/AlGaN is about .
(a) Schematic structure of a GaN-based microdisk with AlN/AlGaN DBR. (b) A SEM image of a GaN microdisk array with diameters of 7, 4.7, and . (c) A magnified SEM image of a GaN microdisk from an angle-view.
Calculated (dashed) and measured (solid) reflectivity spectra of the UV DBR with 25-pairs AlN/AlGaN.
(a) PL spectrum of undoped GaN on the top layer. (b) Measured spectra from a microdisk laser below and above threshold. Lasing wavelengths of the microdisk are 377 and 379 nm. (c) The light-in light-out curve (L-L curve) from the microdisk laser. (d) Comparison of FDTD simulation (red) and measurement (blue). Top two inset figures are calculated mode profiles of mode A and B.
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