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Improvement of electron injection in inverted bottom-emission blue phosphorescent organic light emitting diodes using zinc oxide nanoparticles
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Image of FIG. 1.

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FIG. 1.

(a) Device structure of the FIrpic-doped inverted bottom-emission blue phosphorescent OLEDs with an EIL of ZnO NPs and an AFM image of the layer of ZnO NPs (The image size is and the roughness is about 4.0 nm RMS) (b) Schematic energy level diagram.

Image of FIG. 2.

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FIG. 2.

(a) The current density-voltage (J-V) and (b) luminance-voltage (L-V) characteristics of the devices with different ZnO NPs thicknesses.

Image of FIG. 3.

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FIG. 3.

(a) The external quantum efficiency-current density characteristics and (b) normalized EL spectra of the devices with different ZnO NPs thicknesses at the same current density .

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/content/aip/journal/apl/96/15/10.1063/1.3400224
2010-04-16
2014-04-19

Abstract

We fabricated highly efficient iridium(III) bis[(4,6-di-fluorophenyl)-pyridinato-] picolinate doped inverted bottom-emission blue phosphorescent organic light-emitting diodes, with an electron injection layer of zinc oxide (ZnO) nanoparticles (NPs). The ZnO NPs layer lowers the turn-on voltage by about 4 V and significantly enhances the efficiency. The device with ZnO NPs shows peak efficiencies of 16.5 cd/A and 8.2%, about three times higher than those of the device without ZnO NPs. Since the ZnO NPs layer has a wide band gap, good electron transporting properties and low work function, it can be utilized as an effective electron injection layer with good transparency.

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Scitation: Improvement of electron injection in inverted bottom-emission blue phosphorescent organic light emitting diodes using zinc oxide nanoparticles
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/15/10.1063/1.3400224
10.1063/1.3400224
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