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(a) Scanning electron microscope (SEM) image of InAs/InSb heterostructure nanowires grown on an InAs(111)B substrate using aerosol gold particles with a diameter of 40 nm as initial seeds. The image is recorded with a 30° tilt of the substrate from the horizontal direction and the scale bar is uncompensated for the tilt. (b) SEM image of an InAs/InSb heterostructure nanowire, with one FET fabricated on each segment.
Output characteristics (I-V) of the two materials at RT, (a) InSb and (b) InAs. to (step ) for gate dielectric.
(a) Transfer characteristics at RT, and 300 mV. InSb (black solid curve) and InAs (red dashed curve). (b) Transfer characteristics at 77 K, and 300 mV. InSb (black solid curve) and InAs (red dashed curve). (c) Temperature dependence of the threshold voltage, , in the range between RT and 4.2 K, for both and (◇, ◻) gate dielectrics. . (d) Temperature dependence of the conductance at . InSb and InAs , for gate dielectric.
(a) Transfer characteristics of the InSb segment at temperatures ranging from RT to 4.2 K, at for gate dielectric. (b) Activation energy, , as a function of , for (red solid curve) and 300 mV (blue dashed curve). The typical quality of the fit is displayed as an inset, here for and . (c) Band diagram, illustrating screening of the gate potential due to inversion under the gate. (d) Band diagram, illustrating increased screening of the gate potential due to an increased band-to-band tunneling current from the valence band in the gate region to the conduction band in the drain region.
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