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(a) The crystal structures of -ordered and Ge. (b) The left and right figures show atomic arrangements looked at (100) and (111) planes, respectively, for (top) and Ge (bottom).
Cross-sectional TEM images of (a) and (b) interfaces grown by LTMBE.
(a) characteristics of and diodes at room temperature. The inset shows the schematic illustration of the fabricated diodes. (b) Arrhenius plots of the temperature-dependent characteristics for and diodes. The solid curves show fitting results using the TE theory.
SHB vs metal work function for junctions.
The curve of an junction at 50 K. The inset shows the curve with linear-scale vertical axis for an junction at 50 K.
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