Full text loading...
Impedance spectra in hydrogen and vacuum at zero bias for sample S-1. Inset I shows the spectra at different reverse bias (−0.1 to −0.6 V) conditions in hydrogen ambient. Inset II represents vs V curve in hydrogen and vacuum. The symbols show the experimental points and the lines are the best fit simulated curves.
Impedance spectrum under forward bias of . Insets show the impedance curves for different forward bias in hydrogen. The symbols show the experimental points and the lines are the simulated curves for different RCs and their combinations.
Calculated effective lifetime as a function of surface recombination velocity for different bulk lifetime (, 50, and ). The error bars show lower and upper bounds of the measured and for S-1, S-2, and S-3 under vacuum and hydrogen ambient. Inset shows the first and the second roots at different S.
The best fit values of R, C, and at different in hydrogen ambient. Values in the brackets show the (±)% error.
The best fit values of , , , , , , and at different forward bias () conditions in hydrogen ambient. , , and are the calculated lifetimes corresponding to , , and , respectively. Values in the brackets show the (±)% error in the fitting.
Generation and recombination lifetime values for S-1, S-2, and S-3 under vacuum (Ref. 5) and hydrogen ambient along with measured (before and after surface passivation) by μ-PCD and .
Article metrics loading...