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Thermoelectric properties of polycrystalline and
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10.1063/1.3389494
/content/aip/journal/apl/96/16/10.1063/1.3389494
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/16/10.1063/1.3389494

Figures

Image of FIG. 1.
FIG. 1.

Powder XRD patterns for and materials. Squares (◻) represent InSe impurity phase. Asterisks represent InTe impurity phase.

Image of FIG. 2.
FIG. 2.

Temperature dependence of (a) , (b) , and (c) for and along two different directions. P and A denote perpendicular to and along the pressing direction, respectively. The inset in (c) shows the temperature dependence of the carrier density.

Image of FIG. 3.
FIG. 3.

Temperature dependence of (a) and (b) for and along two different directions. The inset in (a) shows the between 300 and 700 K.

Tables

Generic image for table
Table I.

Nominal and actual compositions as determined by electron probe microanalysis, density, relative density, and room temperature values of thermal conductivity, electrical resistivity, thermopower, carrier concentration, mobility, and band gap for hot-pressed and in different directions. P and A denote perpendicular to and along the pressing direction, respectively.

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/content/aip/journal/apl/96/16/10.1063/1.3389494
2010-04-21
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermoelectric properties of polycrystalline In4Se3 and In4Te3
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/16/10.1063/1.3389494
10.1063/1.3389494
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