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Role of -screw dislocations on indium segregation in InGaN and InAlN alloys
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Image of FIG. 1.
FIG. 1.

DDM in one monolayer along the dislocation line of -screw dislocation in AlN (GaN and InN). Closed and open circles represent metal and N atoms, respectively. The length of the arrows is proportional to the magnitude of the differential displacement between the neighboring atoms along Burger vector, and their direction represents the sign of the displacement. “×” labels the position of the dislocation line. The numbers point out the different atomic sites.

Image of FIG. 2.
FIG. 2.

Total energy (per ) stored in a cylinder of radius centered at the dislocation line as a function of of -screw dislocations in AlN, GaN, and InN, respectively. The arrows point out the respective core radius .

Image of FIG. 3.
FIG. 3.

Distance dependence of the core energy variation of -screw dislocation in GaN (AlN) when an In atom is introduced at the different sites (as shown in Fig. 1).

Image of FIG. 4.
FIG. 4.

Distance dependence of the interaction energy (per ) between -screw dislocation and In atom in GaN (AlN). (solid) and (dashed) are the fitting curves according to Eq. (1).


Generic image for table
Table I.

Prelogarithmic factor , core radius , and core energy (per ) of -screw dislocations in AlN, GaN, and InN, respectively.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Role of c-screw dislocations on indium segregation in InGaN and InAlN alloys