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XRD scans obtained from the (004) reflection of the as-grown and annealed InSbN at different annealing temperatures. The inset shows the lattice mismatch as a function of annealing temperature.
The electron carrier concentration and mobility of the as-grown sample as a function of annealing temperature.
Room temperature Raman spectra of the as-grown and annealed InSbN sample at .
Plot of RT photon energy dependence of as-grown InSbN and annealed InSbN films at . The band gap energy of the films is estimated by extrapolating the linear slope to zero.
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