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Effect of thermal annealing on properties of InSbN grown by molecular beam epitaxy
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10.1063/1.3399775
/content/aip/journal/apl/96/16/10.1063/1.3399775
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/16/10.1063/1.3399775
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XRD scans obtained from the (004) reflection of the as-grown and annealed InSbN at different annealing temperatures. The inset shows the lattice mismatch as a function of annealing temperature.

Image of FIG. 2.
FIG. 2.

The electron carrier concentration and mobility of the as-grown sample as a function of annealing temperature.

Image of FIG. 3.
FIG. 3.

Room temperature Raman spectra of the as-grown and annealed InSbN sample at .

Image of FIG. 4.
FIG. 4.

Plot of RT photon energy dependence of as-grown InSbN and annealed InSbN films at . The band gap energy of the films is estimated by extrapolating the linear slope to zero.

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/content/aip/journal/apl/96/16/10.1063/1.3399775
2010-04-22
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of thermal annealing on properties of InSbN grown by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/16/10.1063/1.3399775
10.1063/1.3399775
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